Samsung 850 Evo MZN5E500BW 500GB
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Samsung’s innovative 3D V-NAND flash memory architecture breaksthrough density, performance, and endurance limitations of today conventional planar NAND architecture. Samsung 3D V-NAND stacks 32 cell layers vertically resulting in higher density and better performance utilizing a smaller footprint. Achieve incredible read and write performance to maximize your everyday computing experience with Samsung TurboWrite technology. You can obtain up to 2x faster random read write speeds than the award-winning Samsung 840 EVO.
|Drive Capacity GB||500|